BTA312Y Datasheet | NXP Semiconductors

ription Passivated, new generation, high mutation triacs in an internally insulated TO-220 plastic package 1.2 Features I Very high mutation performance I Isolated mounting base I High immunity to d V/dt I 2500 V RMS isolation voltage 1.3 Applications I Motor control - e.g. washing machines I Refrigeration pressors I Non-linear rectifier-fed motor loads I Lamp dimmers for US market 1.4 Quick reference data I VDRM ≤ 600 V (BTA312Y-600C) I VDRM ≤ 800 V (BTA312Y-800C) I IGT ≤ 35 m A I IT(RMS) ≤ 12 A I ITSM ≤ 100 A (t = 20 ms) I ITSM ≤ 110 A (t = 16.7 ms) 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description main terminal 1 (T1) main terminal 2 (T2) gate (G) mounting base; isolated mb T2 sym051 Simplified outline Symbol T1 G 1 2 3 SOT78D (TO-220) .Data Sheet.in NXP Semiconductors BTA312Y series C 12 A Three-quadrant triacs high mutation insulated 3. Ordering information Table 2. Ordering information Package Name BTA312Y-600C BTA312Y-800C TO-220 Description Version plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT78D 3-lead TO-220 Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM IT(RMS) ITSM Parameter repetitive peak off-state voltage RMS on-state current non-repetitive peak on-state current Conditions BTA312Y-600C; BTA312Y-800C; full sine wave; Tmb ≤ 85 °C; see Figure 4 and 5 full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms I2t d IT/dt IGM PGM PG(AV) Tstg Tj [1] [1] Min - Max 600 800 12 Unit V V A - 100 110 50 100 2 5 0.5 +150...