BUJD103AD
BUJD103AD is NPN power transistor manufactured by NXP Semiconductors.
description
High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.
1.2 Features and benefits
- Fast switching
- High voltage capability
- Integrated anti-parallel E-C diode
- Very low switching and conduction losses
1.3 Applications
- DC-to-DC converters
- Electronic lighting ballasts
- Inverters
- Motor control systems
1.4 Quick reference data
Table 1. IC Ptot VCESM Quick reference Conditions see Figure 4Tmb ≤ 25 °C VBE = 0 V Min Typ Max 4 80 700 Unit A W V collector current total power dissipation collector-emitter peak voltage DC current gain Symbol Parameter
Static characteristics h FE IC = 500 m A; VCE = 5 V; see Figure 12Tj = 25 °C VCE = 5 V; IC = 3 A; Tmb = 25 °C; see Figure 12 13 22 12.5 32
- NXP Semiconductors
NPN power transistor with integrated diode
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2. Pinning information
Table 2. Pin 1 2 3 B C E Pinning information Symbol Description base collector emitter
[1]
Simplified outline mb
Graphic symbol
E 2 1 3 sym131
SOT428 (DPAK)
[1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
3. Ordering information
Table 3. Ordering information Package Name BUJD103AD DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number
4. Limiting values
Table 4. Symbol VCESM VCBO VCEO IC ICM IB IBM Ptot Tstg Tj Limiting values Parameter collector-emitter peak voltage collector-base voltage collector-emitter voltage collector current peak collector current base current peak base current total power dissipation storage temperature junction temperature Tmb ≤ 25 °C; see Figure 4 see Figure 1, 2 and 3 Conditions VBE = 0 V IE = 0 A IB = 0 A Min -65 Max 700 700 400 4 8 2 4 80 150 150 Unit V V V A A A A W °C °C
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUJD103AD_2
© NXP B.V. 2009. All rights reserved.
Product data...
