BUJD105AD Datasheet | NXP Semiconductors

description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits - Fast switching - High voltage capability - Very low switching and conduction losses 1.3 Applications - DC-to-DC converters - Electronic lighting ballasts - Inverters - Motor control systems 1.4 Quick reference data Table 1. IC Ptot VCESM Quick reference Conditions Tmb ≤ 25 °C; see Figure 3 VBE = 0 V Min Typ Max 8 80 700 Unit A W V collector current total power dissipation collector-emitter peak voltage DC current gain Symbol Parameter Static characteristics h FE VCE = 5 V; IC = 4 A; Tmb = 25 °C; see Figure 6; see Figure 7 8 13.5 - NXP Semiconductors NPN power transistor with integrated diode .. 2. Pinning information Table 2. Pin 1 2 3 mb B C E C Pinning information Symbol Description base collector emitter mounting base; connected to collector 2 1 3 Simplified outline [1] mb Graphic symbol E sym131 SOT428 (SC-63; DPAK) [1] It is not possible to make a connection to pin 2 of the SOT428 (DPAK) package. 3. Ordering information Table 3. Ordering information Package Name BUJD105AD SC-63; DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number 4. Limiting values Table 4. Symbol VCESM VCBO VCEO IC ICM IB IBM Ptot Tstg Tj Limiting values Parameter collector-emitter peak voltage collector-base voltage collector-emitter voltage collector current peak collector current base current peak base current total power dissipation storage temperature junction temperature Tmb ≤ 25 °C; see Figure 3 see Figure 1; see Figure 2 Conditions VBE = 0 V IE = 0 A IB = 0 A Min -65 Max 700 700 400 8 16 4 8 80 150 150 Unit V V V A A A A W °C °C In accordance with the Absolute Maximum Rating System (IEC 60134). BUJD105AD_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 - 8 May...