BUK625R0-40C Datasheet | NXP Semiconductors

N-channel Trench MOS intermediate level FET Rev. 1 - 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced Trench MOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - Suitable for standard and logic level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V Automotive systems - Electric and electro-hydraulic power steering - Motors, lamps and solenoid control - Start-Stop micro-hybrid applications - Transmission control - Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 40 90 158 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 4.1 5 mΩ NXP Semiconductors N-channel Trench MOS intermediate level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 200 m J Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 90 A; Vsup ≤ 40 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 25 A; VDS = 32 V; VGS = 10 V; see Figure 13; see Figure 14 Dynamic characteristics QGD 25.9 n...