BUK654R6-55C Datasheet | NXP Semiconductors

N-channel Trench MOS intermediate level FET Rev. 02 - 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - AEC Q101 pliant - Suitable for intermediate level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V and 24 V automotive systems - Electric and electro-hydraulic power steering - Motors, lamps and solenoid control - Start-Stop micro-hybrid applications - Transmission control - Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 55 100 204 V A W Static characteristics RDSon drain-source VGS = 10 V; ID = 25 A; Tj = 25 °C; on-state resistance see Figure 11 4.6 5.4 mΩ NXP Semiconductors N-channel Trench MOS intermediate level FET Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 100 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C ID = 25 A; VDS = 44 V; VGS = 10 V; see Figure 13; see Figure 14 Min Typ Max Unit 263 m J Table 1. Symbol EDS(AL)S Avalanche ruggedness Dynamic characteristics QGD 31.5 n...