BUK755R2-40B Datasheet | NXP Semiconductors

N-channel Trench MOS standard level FET Rev. 02 - 16 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - Q101 pliant - Suitable for standard level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V loads - Automotive systems - General purpose power switching - Motors, lamps and solenoids 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 40 75 203 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; see Figure 14 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 16 n C ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped 494 m J Static characteristics RDSon drain-source on-state resistance 4.4 5.2 mΩ [1] Continuous current is limited by package. NXP Semiconductors N-channel Trench MOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain mb Simplified outline Graphic symbol G mbb076 1 2 3 SOT78A (3-lead TO-220AB;...