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BUK7E2R7-30B Datasheet N-channel TrenchMOS standard level FET

Manufacturer: NXP Semiconductors

Overview: BUK7E2R7-30B N-channel TrenchMOS standard level FET Rev. 04 — 7 June 2010 Product data sheet 1. Product profile 1.

General Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

1.2

Key Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Suitable for standard level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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