BUK7K29-100E
BUK7K29-100E is Dual N-channel MOSFET manufactured by NXP Semiconductors.
LFPAK56D
Dual N-channel 100 V, 24.5 mΩ standard level MOSFET
2 September 2015
Product data sheet
1. General description
Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using Trench MOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
- Dual MOSFET
- Q101 pliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics FET1 and FET2
RDSon drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C; resistance
Fig. 11
Dynamic characteristics FET1 and...
