Download BUK7K29-100E Datasheet PDF
BUK7K29-100E page 2
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BUK7K29-100E Description

Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

BUK7K29-100E Key Features

  • Dual MOSFET
  • Q101 pliant
  • Repetitive avalanche rated
  • Suitable for thermally demanding environments due to 175 °C rating
  • True standard level gate with VGS(th) rating of greater than 1 V at 175 °C