Datasheet4U Logo Datasheet4U.com

BUK7K29-100E - dual N-channel MOSFET

Description

Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

2.

Features

  • Dual MOSFET.
  • Q101 Compliant.
  • Repetitive avalanche rated.
  • Suitable for thermally demanding environments due to 175 °C rating.
  • True standard level gate with VGS(th) rating of greater than 1 V at 175 °C 3.

📥 Download Datasheet

Datasheet preview – BUK7K29-100E

Datasheet Details

Part number BUK7K29-100E
Manufacturer nexperia
File Size 712.81 KB
Description dual N-channel MOSFET
Datasheet download datasheet BUK7K29-100E Datasheet
Additional preview pages of the BUK7K29-100E datasheet.

📁 Similar Datasheet

Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
BUK7K29-100E Dual N-channel 100 V, 24.5 mΩ standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q101 Compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1 V at 175 °C 3. Applications • 12 V, 24 V and 48 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1.
Published: |