Datasheet Summary
N-channel TrenchMOS standard level FET
Rev. 02
- 2 October 2007 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance I 175 °C rated I Q101 pliant I Standard level patible
1.3 Applications
I Automotive ABS systems I Motors, lamps and solenoids I Diesel injection systems I Automotive transmission control I Fuel pump and injection I Airbag
1.4 Quick reference data
I EDS(AL)S ≤ 91 mJ I ID ≤ 55 A I RDSon = 11 mΩ (typ) I Ptot ≤ 75 W
2. Pinning information
Table 1. Pin 4 mb...
