BUK9006-55A Description
N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology. BUK9006-55A distributed as individual die on reel.
BUK9006-55A Datasheet
| Part number | BUK9006-55A |
|---|---|
| Download | BUK9006-55A Datasheet (PDF) |
| File Size | 250.39 KB |
| Manufacturer | NXP Semiconductors |
| Description | N-channel Enhancement mode field-effect power Transistor |
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