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BUK9006-55A Datasheet N-channel Enhancement Mode Field-effect Power Transistor

Manufacturer: NXP Semiconductors

Overview: .. BUK9006-55A TrenchMOS™ logic level FET Rev. 01 — 1 August 2003 Preliminary data 1. Product profile 1.

General Description

N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.

Product availability: BUK9006-55A distributed as individual die on reel.

1.2

Key Features

  • s 25 A testing of individual die s Inductive energy testing of individual die s Life-tested to Q101 at 175 °C s Automatic visual inspection. 1.3.

BUK9006-55A Distributor