BUK9006-55A
BUK9006-55A is N-channel Enhancement mode field-effect power Transistor manufactured by NXP Semiconductors.
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TrenchMOS™ logic level FET
Rev. 01
- 1 August 2003 Preliminary data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology. Product availability: BUK9006-55A distributed as individual die on reel.
1.2 Features s 25 A testing of individual die s Inductive energy testing of individual die s Life-tested to Q101 at 175 °C s Automatic visual inspection.
1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching.
1.4 Quick reference data s EDS(AL)S ≤ 1.1 J s V(BR)DSS ≤...
