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BUK9006-55A - N-channel Enhancement mode field-effect power Transistor

General Description

N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.

Product availability: BUK9006-55A distributed as individual die on reel.

Key Features

  • s 25 A testing of individual die s Inductive energy testing of individual die s Life-tested to Q101 at 175 °C s Automatic visual inspection. 1.3.

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www.DataSheet4U.com BUK9006-55A TrenchMOS™ logic level FET Rev. 01 — 1 August 2003 Preliminary data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology. Product availability: BUK9006-55A distributed as individual die on reel. 1.2 Features s 25 A testing of individual die s Inductive energy testing of individual die s Life-tested to Q101 at 175 °C s Automatic visual inspection. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 1.1 J s V(BR)DSS ≤ 55 V s Die size = 4.30 × 4.30 mm (typ) s RDSon(die) = 5 mΩ (typ) s VGS(th) = 1.