BUK9245-55A Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™1 technology, featuring very low on-state resistance. Product availability: BUK9245-55A in SOT428 (D-PAK). 2. Features s s s s Trench MOS™ technology Q101 pliant 175 °C rated Logic level patible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d) 1 Top view g s mb d Simplified outline Symbol MBB076 2 3 MBK091 SOT428 (D-PAK) 1. Trench MOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors .. Trench MOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 5 A Tj = 25 °C; VGS = 4.5 V; ID = 5 A Tj = 25 °C; VGS = 10 V; ID = 5 A Typ - - - - 31 - 27 Max 55 28 70 175 45 50 40 Unit V A W °C mΩ mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 28 A; VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω; starting Tj = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 RGS = 20 kΩ...