BUK9275-100A Datasheet | NXP Semiconductors

description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - Low conduction losses due to low on-state resistance - Q101 pliant - Suitable for logic level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V, 24 V and 42 V loads - Automotive and general purpose power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 100 V 21.7 A 88 W Static characteristics RDSon VGS = 4.5 V; ID = 10 A; Tj = 25 °C VGS = 10 V; ID = 10 A; Tj = 25 °C VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive ID = 14 A; Vsup ≤ 100 V; drain-source RGS = 50 Ω; VGS = 5 V; avalanche energy Tj(init) = 25 °C; unclamped 100 m J 62 64 84 72 75 mΩ mΩ mΩ NXP Semiconductors N-channel Trench MOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 2 1 3 mb Simplified outline Graphic symbol G mbb076 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Package Name BUK9275-100A DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3 Tmb = 100 °C; VGS = 5 V; see Figure 1 IDM Ptot Tstg Tj VGSM peak drain...