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BUK954R2-55B - N-channel TrenchMOS logic level FET

Download the BUK954R2-55B datasheet PDF (BUK964R2-55B included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel trenchmos logic level fet.

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Suitable for logic level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUK964R2-55B_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BUK954R2-55B
Manufacturer NXP Semiconductors
File Size 172.57 KB
Description N-channel TrenchMOS logic level FET
Datasheet download datasheet BUK954R2-55B Datasheet

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Full PDF Text Transcription

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BUK954R2-55B N-channel TrenchMOS logic level FET Rev. 03 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V and 24 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1.
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