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BUK9616-55A - N-Channel MOSFET

Download the BUK9616-55A datasheet PDF. This datasheet also covers the BUK9516-55A variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 .

Key Features

  • very low on-state resistance. It is intended for use in automotive and general purpose switching.

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Note: The manufacturer provides a single datasheet file (BUK9516-55A-NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for BUK9616-55A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK9616-55A. For precise diagrams, and layout, please refer to the original PDF.

Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transisto...

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ON N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9516-55A BUK9616-55A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX.

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