BUK963R2-40B
BUK963R2-40B is N-channel TrenchMOS logic level FET manufactured by NXP Semiconductors.
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
- AEC Q101 pliant
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
3. Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2; Fig. 3
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11; Fig. 12
Dynamic characteristics
QGD gate-drain charge
VGS = 5 V; ID = 25 A; VDS = 32 V;
Tj = 25 °C; Fig. 13
[1]
Min Typ Max Unit
- - 40 V
- - 100 A
- - 300 W
- 2.4 2.8 mΩ
- 2.7 3.2 mΩ
- 37
- n C
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