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BUK963R2-40B - N-channel TrenchMOS logic level FET

Datasheet Summary

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

2.

Features

  • AEC Q101 compliant.
  • Low conduction losses due to low on-state resistance.
  • Suitable for logic level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 3.

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Datasheet Details

Part number BUK963R2-40B
Manufacturer NXP Semiconductors
File Size 267.24 KB
Description N-channel TrenchMOS logic level FET
Datasheet download datasheet BUK963R2-40B Datasheet
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D2PAK BUK963R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • AEC Q101 compliant • Low conduction losses due to low on-state resistance • Suitable for logic level gate drive sources • Suitable for thermally demanding environments due to 175 °C rating 3. Applications • 12 V loads • Automotive systems • General purpose power switching • Motors, lamps and solenoids 4. Quick reference data Table 1.
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