BUK9E4R4-40B Overview
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
BUK9E4R4-40B datasheet by NXP Semiconductors.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BUK9E4R4-40B |
|---|---|
| Datasheet | BUK9E4R4-40B BUK964R4-40B Datasheet (PDF) |
| File Size | 342.79 KB |
| Manufacturer | NXP Semiconductors |
| Description | TrenchMOS logic level FET |
|
|
|
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BUK9E4R9-60E | N-Channel MOSFET |
| BUK9E04-30B | N-Channel MOSFET |
| BUK9E06-55A | TrenchMOS logic level FET |
| BUK9E15-60E | N-Channel MOSFET |
| BUK9E2R3-40E | N-channel TrenchMOS logic level FET |
| BUK9E2R8-60E | N-Channel MOSFET |
| BUK9E3R2-40E | N-channel TrenchMOS logic level FET |
| BUK9E3R7-60E | N-Channel MOSFET |
| BUK9E6R1-100E | N-channel TrenchMOS logic level FET |
| BUK9E8R5-40E | N-channel TrenchMOS logic level FET |