BUK9E8R5-40E
BUK9E8R5-40E is N-channel TrenchMOS logic level FET manufactured by NXP Semiconductors.
description
Logic level N-channel MOSFET in a SOT226 package using Trench MOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
- AEC Q101 pliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C 1.3 Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching 1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 20 A; Tj = 25 °C; Fig. 11
[1]
Min
- Typ
- Max 40 75 96
Unit V A W
Static characteristics drain-source on-state resistance gate-drain charge 6.4 8.1 mΩ
Dynamic characteristics QGD VGS = 5 V; ID = 20 A; VDS = 32 V; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
- 7.3
- n C
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NXP Semiconductors
N-channel Trench MOS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description
G D S D gate drain source mounting base; connected to drain
1 2 3
Simplified outline mb
Graphic symbol
G mbb076
I2PAK (SOT226)
3. Ordering information
Table 3. Ordering information Package Name BUK9E8R5-40E I2PAK Description plastic single-ended package (I2PAK); TO-262 Version SOT226 Type number
4. Marking
Table 4. Marking codes Marking code BUK9E8R5-40E Type number...
