BUK9K12-60E
description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using Trench MOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
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- Dual MOSFET Q101 pliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
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12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11
[1]
Min
- Typ
- Max 60 35 68
Unit V A W
Static characteristics FET1 and FET2 drain-source on-state resistance...
