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BUK9Y11-30B - N-channel TrenchMOS logic level FET

General Description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

Key Features

  • I Very low on-state resistance I 175 °C rated I Q101 compliant I Logic level compatible 1.3.

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BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 — 30 August 2007 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 175 °C rated I Q101 compliant I Logic level compatible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V loads 1.4 Quick reference data I EDS(AL)S ≤ 112 mJ I ID ≤ 59 A I RDSon = 9.3 mΩ (typ) I Ptot ≤ 75 W 2. Pinning information Table 1.