BUK9Y11-30B Datasheet | Nexperia

N-channel TrenchMOS logic level FET Rev. 01 - 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 175 °C rated I Q101 pliant I Logic level patible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V loads 1.4 Quick reference data I EDS(AL)S ≤ 112 mJ I ID ≤ 59 A I RDSon = 9.3 mΩ (typ) I Ptot ≤ 75 W 2. Pinning information Table 1. Pinning Pin Description 1, 2, 3 source (S) 4 gate (G) mb...