NX2301P Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
NX2301P Key Features
- 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified