NX7002AKW Datasheet | NXP Semiconductors

11 July 2012 60 V, single N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits - Very fast switching - Trench MOSFET technology - ESD protected 1.3 Applications - Relay driver - High-speed line driver - Low-side loadswitch - Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 100 m A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ - Max 60 20 170 Unit V V m A Static characteristics drain-source on-state resistance [1] - 3 Ω Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product NXP Semiconductors 60 V, single N-channel Trench MOSFET 2. Pinning...