NX7002AKS Datasheet | Nexperia

60 V, dual N-channel Trench MOSFET Rev. 1 - 1 March 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits - Very fast switching - Trench MOSFET technology - ESD protection 1.3 Applications - Relay driver - High-speed line driver - Low-side load switch - Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 100 m A; Tj = 25 °C [1] Min Typ Max Unit --20 -- 60 V 20 V 170 m A - 3 4.5 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1...