Datasheet Summary
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 01
- 13 February 2008 Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN plement: PBHV8540T.
1.2 Features
I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified
1.3 Applications
I I I I I I I
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