PBHV9040T-Q - 0.25A PNP high-voltage low VCEsat transistor

Nexperia

General Description

PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBHV8540T-Q.

Key Features

High voltage.
Low collector-emitter saturation voltage VCEsat.
High collector current capability IC and ICM.
High collector current gain (hFE) at high IC.
Small SMD plastic package.
Qualified according to AEC-Q101 and recommended for use in automotive.

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PBHV9040T-Q 0.25a pnp high-voltage low vcesat transistor by Nexperia - Datasheet Preview

Datasheet Details

Part number	PBHV9040T-Q
Manufacturer	Nexperia
File Size	263.62 KB
Description	0.25A PNP high-voltage low VCEsat transistor
Datasheet	PBHV9040T-Q Datasheet

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PBHV9040T-Q 500 V, 0.25 A PNP high-voltage low VCEsat transistor 22 March 2022 Product data sheet 1. General description PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T-Q. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • Small SMD plastic package • Qualified according to AEC-Q101 and recommended for use in automotive applications 3.