PBSS4540X Datasheet | NXP Semiconductors

FEATURES - High h FE and low VCEsat at high current operation - High collector current capability: IC maximum 4 A - High efficiency leading to less heat generation. APPLICATIONS - Medium power peripheral drivers (e.g. fan and motor) - Strobe flash units for DSC and mobile phones - Inverter applications (e.g. TFT displays) - Power switch for LAN and ADSL systems - Medium power DC-to-DC conversion - Battery chargers. DESCRIPTION NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP plement: PBSS5540X. MARKING TYPE NUMBER PBSS4540X Note 1. - = p: made in Hong Kong. - = t: made in Malaysia. - = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4540X SC-62 DESCRIPTION MARKING CODE(1) - 1B 3 2 1 QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 4 10 71 UNIT V A A mΩ 2 3 1 sym042 Fig.1 Simplified outline (SOT89) and symbol. VERSION SOT89 plastic surface mounted package; collector pad for good heat transfer; 3 leads 2004 Nov 04 Philips Semiconductors .. Product specification 40 V, 5 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICRM ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) maximum repetitive collector current peak collector current base current (DC) peak base current total power dissipation tp ≤ 1 ms Tamb ≤ 25 °C notes 1 and 2 note 2 note 3 note 4 note 5 Tstg Tj Tamb Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. storage temperature junction temperature operating ambient temperature - - - - - - 65 - - 65 notes 1 and 2 tp ≤ 1 ms CONDITIONS open emitter open base open collector - - - - - - - - MIN. MAX. 40 40 6 4 5 10 1 2 2.5 0.55 1 1.4...