PBSS4540X Datasheet PDF (40V 5A NPN low VCEsat (BISS) transistor)

PBSS4540X - 40V 5A NPN low VCEsat (BISS) transistor

Description

NPN low VCEsat transistor in a medium power SOT89 (SC-62) package.

PNP complement: PBSS5540X.

MARKING TYPE NUMBER PBSS4540X Note 1.

= p: made in Hong Kong.

= t: made in Malaysia.

= W: made in China.

Features

High hFE and low VCEsat at high current operation.
High collector current capability: IC maximum 4 A.
High efficiency leading to less heat generation.

Datasheet Details

Part number	PBSS4540X
Manufacturer	NXP Semiconductors
File Size	131.44 KB
Description	40V 5A NPN low VCEsat (BISS) transistor
Datasheet	PBSS4540X Datasheet
Additional preview pages of the PBSS4540X datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D109 PBSS4540X 40 V, 5 A NPN low VCEsat (BISS) transistor Product speciﬁcation Supersedes data of 2004 Jun 11 2004 Nov 04 Philips Semiconductors www.DataSheet4U.com Product speciﬁcation 40 V, 5 A NPN low VCEsat (BISS) transistor FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers (e.g. fan and motor) • Strobe flash units for DSC and mobile phones • Inverter applications (e.g. TFT displays) • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers.

Published: Mar 27, 2010 |