PBSS4540Z Datasheet | NXP Semiconductors

FEATURES - High current (max. 10 A) - Low voltage (max. 40 V) - Low VCEsat. APPLICATIONS - Heavy duty battery powered equipment (Automotive, Tele and Audio/Video) such as motor and lamp drivers - VCEsat critical applications such as the latest low supply voltage IC applications - All battery driven equipment to save battery power. handbook, halfpage PINNING PIN 1 2 3 4 base collector emitter collector DESCRIPTION 2, 4 1 DESCRIPTION NPN low VCEsat transistor in a SOT223 plastic package. PNP plement: PBSS5540Z. MARKING CODE TYPE NUMBER PBSS4540Z MARKING CODE PB4540 Fig.1 Simplified outline (SOT223) and symbol. 1 Top view 2 3 MAM287 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. 40 40 6 5 10 2 1.35 +150 150 +150 V V V A A A W °C °C °C UNIT 1999 Aug 04 Philips Semiconductors Preliminary specification NPN medium power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 92 UNIT K/W 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off...