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PBSS5130T - PNP Transistor

General Description

PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX.

30 1

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.
  • Cost effective alternative to.

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DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 12 Philips Semiconductors www.DataSheet4U.com Product specification 30 V, 1 A PNP low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alternative to MOSFETS in specific applications. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load driver (e.g.