PBSS5540X
Overview
TYPE NUMBER PBSS5540X Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China.
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High efficiency leading to less heat generation. APPLICATIONS
- Supply line switching circuits
- Battery management applications
- DC/DC converter applications
- Strobe flash units
- Medium power driver (e.g. relays, buzzers and motors). 1 DESCRIPTION PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. NPN complement: PBSS4540X. MARKING 2 3 PINNING PIN emitter collector base RCEsat QUICK REFERENCE DATA SYMBOL VCEO IC ICRP PARAMETER collector current (DC)
