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PBSS5540X - 40V 5A PNP low VCEsat (BISS) transistor

General Description

PNP low VCEsat transistor in a medium power SOT89 (SC-62) package.

NPN complement: PBSS4540X.

MAX.

4 5 75 UNIT V A A mΩ collector-emitter vo

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • High efficiency leading to less heat generation.

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DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D109 PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jan 15 2004 Nov 04 Philips Semiconductors www.DataSheet4U.com Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High efficiency leading to less heat generation. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Medium power driver (e.g. relays, buzzers and motors). 1 DESCRIPTION PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. NPN complement: PBSS4540X.