PBSS5540X Description
PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. MARKING 2 3 PINNING PIN emitter collector base RCEsat QUICK REFERENCE DATA SYMBOL VCEO IC ICRP PARAMETER collector current (DC) PBSS5540X MAX. −4 −5 75 UNIT V A A mΩ collector-emitter voltage −40 repetitive peak collector current equivalent on-resistance DESCRIPTION 2 TYPE NUMBER PBSS5540X Note.
PBSS5540X Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High efficiency leading to less heat generation