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PBSS5540Z - PNP medium power transistor

General Description

PNP low VCEsat transistor in a SOT223 plastic package.

NPN complement: PBSS4540Z.

Fig.1 Simplified outline (SOT223) and symbol.

Key Features

  • Low collector-emitter saturation voltage.
  • High current capability.
  • Improved device reliability due to reduced heat generation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS5540Z 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Jan 26 2001 Sep 21 NXP Semiconductors 40 V low VCEsat PNP transistor Product data sheet PBSS5540Z FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers) • MOSFET driver applications.