PDTA115E - PNP resistor-equipped transistors

NXP Semiconductors

General Description

QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP.

100 100 MAX.

50 20 UNIT V mA kΩ kΩ PNP resistor-equipped transistor (see “Simplified outline,

Key Features

Built-in bias resistors.
Simplified circuit design.
Reduction of component count.
Reduced pick and place costs.

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PDTA115E pnp resistor-equipped transistors by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	PDTA115E
Manufacturer	NXP Semiconductors
File Size	122.13 KB
Description	PNP resistor-equipped transistors
Datasheet	PDTA115E Datasheet

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DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product speciﬁcation Supersedes data of 2004 May 05 2004 Jul 30 Philips Semiconductors www.DataSheet4U.com Product speciﬁcation PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION PDTA115E series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP. − − 100 100 MAX.