Description
base collector emitter 1 2 3 3 PDTA114EE PDTA114EEF PDTA114EK PDTA114ET PDTA114EU 1 Top view 2 MDB271 1 2 handbook, halfpage base emitter collector 3 R1 1 R2 3 3 2 PDTA114EM handbook, halfpage 1 2 3 R1 3 1 Bottom view MDB267 base emitter collector 3 2 1 R2 2 2004 Aug 02 3 www.DataSheet4U.com NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot output current (DC) peak collector current total power dissipation SOT54 SOT23 SOT346 SOT323 SOT416 SOT490 SOT883 Tstg Tj Tamb Notes 1.
Key Features
- Built-in bias resistors
- Simplified circuit design
- Reduction of component count
- Reduced pick and place costs. APPLICATIONS
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver. DESCRIPTION
