PDTA114EU
FEATURES
- Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
- Simplification of circuit design
- Reduces number of ponents and board space. APPLICATIONS
- Especially suitable for space reduction in interface and driver circuits
- Inverter circuit configurations without use of external resistors. DESCRIPTION
PNP resistor-equipped transistor in a SOT323 plastic package. NPN plement: PDTC114EU. PINNING
MGA893
- 1
PDTA114EU handbook, 4 columns
3 3 R1 1 R2 2 1 Top view 2
MAM135
Fig.1 Simplified outline (SOT323) and symbol.
MARKING TYPE NUMBER
1 2 3
MARKING CODE(1) ∗03
PDTA114EU Note
PIN 1 2 3
DESCRIPTION base/input emitter/ground (+) collector/output Fig.2 Equivalent inverter symbol.
1. ∗ =
- : Made in Hong Kong. ∗ = t : Made in Malaysia.
1999 Apr 13
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage...
