Nexperia PDTA114EMB
100mA PNP resistor-equipped transistor
FEATURES AND BENEFITS
● 100 mA output current capability● Reduces component count
● Built-in bias transistors
● Reduces pick and place costs
● Simplifies circuit design
● Leadless ultra small SMD plastic package
● Low package height of 0.37 mm
● AEC-Q101 qualified 3.
APPLICATIONS
● Low-current peripheral driver● Replaces general-purpose transistors in digital applications
● Control of IC inputs
● Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IO output current R1 bias resistor 1 (input) R2/R1 bias resistor ratio Conditions open base Tamb = 25 °C Min Typ Max Unit - - -50 V - - 7 10 0.8 1 -100 mA 13 kΩ 1.2 Nexperia PDTA114EMB 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 I input (base) 2 G GND (emitter) 3 O output (collector) Simplified outline Graphic symbol 3 1 2 Transparent top view DFN1006B-3 (SOT883B) O R1 I R2 GND sym003 6.