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PDTA114EMB Datasheet PDF

Nexperia PDTA114EMB

100mA PNP resistor-equipped transistor

Part No. PDTA114EMB
Datasheet PDTA114EMB Download
Manufacturer
Nexperia
Description 100mA PNP resistor-equipped transistor
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PDTA114EMB datasheet page 1 preview

FEATURES AND BENEFITS

● 100 mA output current capability
● Reduces component count
● Built-in bias transistors
● Reduces pick and place costs
● Simplifies circuit design
● Leadless ultra small SMD plastic package
● Low package height of 0.37 mm
● AEC-Q101 qualified 3.

APPLICATIONS

● Low-current peripheral driver
● Replaces general-purpose transistors in digital applications
● Control of IC inputs
● Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IO output current R1 bias resistor 1 (input) R2/R1 bias resistor ratio Conditions open base Tamb = 25 °C Min Typ Max Unit - - -50 V - - 7 10 0.8 1 -100 mA 13 kΩ 1.2 Nexperia PDTA114EMB 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 5. Pinning information Table 2. Pinning information Pin Symbol

DESCRIPTION

1 I input (base) 2 G GND (emitter) 3 O output (collector) Simplified outline Graphic symbol 3 1 2 Transparent top view DFN1006B-3 (SOT883B) O R1 I R2 GND sym003 6.
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