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PDTA114EMB - 100mA PNP resistor-equipped transistor

General Description

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • 100 mA output current capability.
  • Reduces component count.
  • Built-in bias transistors.
  • Reduces pick and place costs.
  • Simplifies circuit design.
  • Leadless ultra small SMD plastic package.
  • Low package height of 0.37 mm.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PDTA114EMB
Manufacturer Nexperia
File Size 229.52 KB
Description 100mA PNP resistor-equipped transistor
Datasheet download datasheet PDTA114EMB Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PDTA114EMB 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 19 February 2024 Product data sheet 1. General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114EMB 2. Features and benefits • 100 mA output current capability • Reduces component count • Built-in bias transistors • Reduces pick and place costs • Simplifies circuit design • Leadless ultra small SMD plastic package • Low package height of 0.37 mm • AEC-Q101 qualified 3. Applications • Low-current peripheral driver • Replaces general-purpose transistors in digital applications • Control of IC inputs • Mobile applications 4. Quick reference data Table 1.