NXP Semiconductors PDTA114EE
PNP resistor-equipped transistor
| Part No. | PDTA114EE |
|---|---|
| Datasheet | PDTA114EE Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP resistor-equipped transistor |
| Buy | Stock & Price |
FEATURES
● Built-in bias resistors R1 and R2 (typ. 10 kΩ each)● Simplification of circuit design
● Reduces number of components and board space.
APPLICATIONS
● Especially suitable for space reduction in interface and driver circuits● Inverter circuit configurations without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in an SC-75 plastic package. NPN complement: PDTC114EE. PINNING PIN 1 2 3DESCRIPTION
base/input emitter/ground (+) collector/output MGA893 - 1 PDTA114EE handbook, halfpage 3 R1 1 R2 3 1 Top view 2 MAM345 2 Fig.1 Simplified outline (SC-75) and symbol. MARKING TYPE NUMBER PDTA114EE 2 1 3 MARKING CODE 03 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = −5 mA; VCE = −5 V CONDITIONS open base − − − − 30 7 0.8 MIN. − − − − − 10 1 TYP. MAX...
