PDTA114EE Datasheet (PDF) Download
NXP Semiconductors
PDTA114EE

Key Features

  • Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
  • Simplification of circuit design
  • Reduces number of components and board space. APPLICATIONS
  • Especially suitable for space reduction in interface and driver circuits
  • Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in an SC-75 plastic package. NPN complement: PDTC114EE. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output