NXP Semiconductors PDTA114ES
PNP resistor-equipped transistor
| Part No. | PDTA114ES |
|---|---|
| Datasheet | PDTA114ES Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP resistor-equipped transistor |
| Buy | Stock & Price |
FEATURES
● Built-in bias resistors R1 and R2 (typ. 10 kΩ each)● Simplification of circuit design
● Reduces number of components and board space.
APPLICATIONS
● Especially suitable for space reduction in interface and driver circuit applications● Inverter circuit configurations without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in a TO-92; SOT54 plastic package. NPN complement: PDTC114ES. PINNING PIN 1 2 3DESCRIPTION
base/input collector/output emitter/ground (+) Fig.2 Equivalent inverter symbol. MAM338 PDTA114ES handbook, halfpage 2 R1 1 R2 3 1 2 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. 1 3 MGL136 2 QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = −5 mA; VCE = −5 V CONDITIONS open base − − − − 30 7 0.8 MIN. − − − − − 10 1 TYP. MAX. −50 −100 −100 500 − 13 1.2 kΩ U...
