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PDTA114ES

PDTA114ES is PNP resistor-equipped transistor manufactured by NXP Semiconductors.
PDTA114ES datasheet preview

PDTA114ES Datasheet

Part number PDTA114ES
Download PDTA114ES Datasheet (PDF)
File Size 69.90 KB
Manufacturer NXP Semiconductors
Description PNP resistor-equipped transistor
PDTA114ES page 2 PDTA114ES page 3

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PDTA114ES Description

PNP resistor-equipped transistor in a TO-92; PINNING PIN 1 2 3 DESCRIPTION base/input collector/output emitter/ground (+) Fig.2 Equivalent inverter symbol. 1 3 MGL136 2 QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = −5 mA;.

PDTA114ES Key Features

  • Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
  • Simplification of circuit design
  • Reduces number of ponents and board space

PDTA114ES Applications

  • Especially suitable for space reduction in interface and driver circuit applications

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