NXP Semiconductors PDTA114EEF
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | PDTA114EEF |
|---|---|
| Datasheet | PDTA114EEF Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP resistor-equipped transistor |
| Buy | Stock & Price |
FEATURES
● Power dissipation comparable to SOT23● Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
● Simplification of circuit design
● Reduces number of components and board space.
APPLICATIONS
● Especially suitable for space reduction in interface and driver circuits● Inverter circuit configurations without use of external resistors. 1 Top view 2 MAM413 PDTA114EEF PINNING PIN 1 2 3 base/input emitter/ground (+) collector/output
DESCRIPTION
handbook, halfpage 3 R1 1 R2 3 2DESCRIPTION
PNP resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complement: PDTC114EEF. MARKING Fig.1 Simplified outline (SC-89; SOT490) and symbol. 1 3 2 TYPE NUMBER PDTA114EEF MARKING CODE 03 MGA893 - 1 Fig.2 Equivalent inverter symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1.
