PDTA114EEF Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 1999 May 21 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor Features - Power dissipation parable to SOT23 - Built-in bias resistors R1 and R2 (typ. 10 kΩ each) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. 1 Top view 2 MAM413 PINNING PIN 1 2 3 base/input emitter/ground (+) collector/output DESCRIPTION...