PESD5V0X1BT Datasheet | NXP Semiconductors

description Ultra low capacitance bidirectional Electro Static Discharge (ESD) protection diodes in small Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from the damage caused by ESD and other transients. The devices may also be used for unidirectional ESD protection of up to two signal lines. Table 1. Product overview Package NXP PESD5V0X1BQ PESD5V0X1BT SOT663 SOT23 JEDEC TO-236AB ultra small and flat lead very small Package configuration Type number 1.2 Features I Bidirectional ESD protection of one line I ESD protection up to 9 k V I Unidirectional ESD protection of up to I IEC 61000-4-2; level 4 (ESD) two lines I Ultra low diode capacitance: Cd = 0.9 p F I AEC-Q101 qualified I Very low leakage current: IRM = 1 n A 1.3 Applications I USB interfaces I I I I I Antenna protection Radio Frequency (RF) protection 10/100/1000 Mbit/s Ethernet Fire Wire Asymmetric Digital Subscriber Line (ADSL) I High-speed data lines I Subscriber Identity Module (SIM) card protection I puters, peripherals and printers I Cellular handsets and accessories I Portable electronics I munication systems I Audio and video equipment ..net NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT Ultra low capacitance bidirectional ESD protection diodes 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Per diode VRWM Cd reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V [1] [2] Parameter Conditions Min - Typ 0.9 2 Max 5 1.3 2.6 Unit V p F p F [1] [2] Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1. Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3. 2. Pinning information Table 3. Pin 1 2 3 Pinning Description cathode (diode 1) cathode (diode 2) mon anode 3 3 Simplified outline Graphic symbol PESD5V0X1BQ 006aaa154 PESD5V0X1BT 1 2 3 cathode (diode 1) cathode (diode 2) mon anode 1 2 3...