PH1930AL Datasheet | NXP Semiconductors

N-channel TrenchMOS logic level FET Rev. 03 - 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in puting and consumer applications. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - Consumer applications - Desktop Voltage Regulator Module (VRM) - Notebook Voltage Regulator Module (VRM) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max...