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PH1930AL - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing and consumer applications.

Key Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for logic level gate drive sources 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PH1930AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ Consumer applications „ Desktop Voltage Regulator Module (VRM) „ Notebook Voltage Regulator Module (VRM) 1.4 Quick reference data Table 1.