PH1955L Datasheet | NXP Semiconductors

N-channel TrenchMOS logic level FET Rev. 01 - 15 August 2005 .. Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Logic level threshold s 175 °C rated s Low on-state resistance s Surface-mounted package 1.3 Applications s DC-to-DC converters s Motors, lamps and solenoids s General purpose power switching s 12 V and 24 V loads 1.4 Quick reference data s VDS ≤ 55 V s RDSon ≤ 17.3 mΩ s ID ≤ 40 A s QGD = 8 nC (typ) 2. Pinning information Table 1: Pin 1, 2, 3 4 mb Pinning Description source (S) gate (G) mounting base;...