Datasheet4U Logo Datasheet4U.com

PH1955L - N-channel TrenchMOS Iogic levelFET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Key Features

  • s Logic level threshold s 175 °C rated s Low on-state resistance s Surface-mounted package 1.3.

📥 Download Datasheet

Other Datasheets by NXP Semiconductors

Part Number Description
PH1930AL N-channel TrenchMOS logic level FET
PH16030L N-channel FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PH1955L N-channel TrenchMOS logic level FET Rev. 01 — 15 August 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Logic level threshold s 175 °C rated s Low on-state resistance s Surface-mounted package 1.3 Applications s DC-to-DC converters s Motors, lamps and solenoids s General purpose power switching s 12 V and 24 V loads 1.4 Quick reference data s VDS ≤ 55 V s RDSon ≤ 17.3 mΩ s ID ≤ 40 A s QGD = 8 nC (typ) 2.