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PH20100S - N-Channel MOSFET

General Description

Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

  • s Low thermal resistance s Low gate drive current s SO8 equivalent area footprint s Low on-state resistance. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PH20100S N-channel TrenchMOS™ standard level FET Rev. 02 — 17 August 2004 Product data sheet 1. Product profile 1.1 General description www.DataSheet4U.com Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low thermal resistance s Low gate drive current s SO8 equivalent area footprint s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies 1.4 Quick reference data s VDS ≤ 100 V s Ptot ≤ 62.5 W s ID ≤ 34.3 A s RDSon ≤ 23 mΩ 2.