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PH3120L - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.

Key Features

  • s Low thermal resistance s Logic level gate drive s SO8 equivalent area footprint s Very low on-state resistance 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PH3120L N-channel TrenchMOS™ logic level FET Rev. 02 — 20 January 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s Low thermal resistance s Logic level gate drive s SO8 equivalent area footprint s Very low on-state resistance 1.3 Applications s DC-to-DC converters s Portable appliances s Switched-mode power supplies s Notebook computers 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 62.5 W s ID ≤ 100 A s RDSon ≤ 2.65 mΩ 2.