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PHB146NQ06LT - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

  • s Logic level threshold s Low on-state resistance. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHB146NQ06LT N-channel TrenchMOS™ logic level FET Rev. 01 — 10 May 2004 www.DataSheet4U.com Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold s Low on-state resistance. 1.3 Applications s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptible power supplies s General industrial applications. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 250 W s ID ≤ 75 A s RDSon ≤ 5.4 mΩ. 2.