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PHB191NQ06LT Datasheet N-channel TrenchMOS logic level FET

Manufacturer: NXP Semiconductors

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General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

1.2

Overview

PHB191NQ06LT N-channel TrenchMOS logic level FET Rev.

02 — 13 January 2010 Product data sheet 1.

Product profile 1.

Key Features

  • Low conduction losses due to low on-state resistance.
  • Suitable for logic level gate drive sources 1.3.

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