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PHK12NQ03LT - N-channel TrenchMOS-TM logic level FET

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

  • s Low on-state resistance s Fast switching. 1.3.

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PHK12NQ03LT N-channel TrenchMOS™ logic level FET M3D315 Rev. 02 — 02 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low on-state resistance s Fast switching. 1.3 Applications s DC-to-DC converters s Portable equipment applications. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.5 W s ID ≤ 11.8 A s RDSon ≤ 14 mΩ 2. Pinning information Table 1: Pin 4 5,6,7,8 Pinning - SOT96-1 (SO8), simplified outline and symbol Description gate (g) drain (d) g Simplified outline 8 5 Symbol d www.DataSheet4U.com 1,2,3 source (s) 1 Top view 4 MBK187 MBB076 s SOT96-1 (SO8) 3.