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PHK12NQ03LT
N-channel TrenchMOS™ logic level FET
M3D315
Rev. 02 — 02 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance s Fast switching.
1.3 Applications
s DC-to-DC converters s Portable equipment applications.
1.4 Quick reference data
s VDS ≤ 30 V s Ptot ≤ 2.5 W s ID ≤ 11.8 A s RDSon ≤ 14 mΩ
2. Pinning information
Table 1: Pin 4 5,6,7,8 Pinning - SOT96-1 (SO8), simplified outline and symbol Description gate (g) drain (d)
g
Simplified outline
8 5
Symbol
d
www.DataSheet4U.com 1,2,3 source (s)
1 Top view
4
MBK187
MBB076
s
SOT96-1 (SO8)
3.