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PHK12NQ10T
TrenchMOS™ standard level FET
M3D315
Rev. 01 — 15 September 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounting package s Low on-state resistance.
1.3 Applications
s DC-to-DC converter primary side s Portable equipment applications.
1.4 Quick reference data
s VDS ≤ 100 V s Ptot ≤ 8.9 W s ID ≤ 11.6 A s RDSon ≤ 28 mΩ
2. Pinning information
Table 1: Pin 4 5,6,7,8 Pinning - SOT96-1 (SO8), simplified outline and symbol Description gate (g) drain (d)
g 1 Top view 4
MBK187
Simplified outline
8 5
Symbol
d
www.DataSheet4U.com 1,2,3 source (s)
MBB076
s
SOT96-1 (SO8)
Philips Semiconductors
PHK12NQ10T
TrenchMOS™ standard level FET
3.
PHK12NQ10T Datasheet
