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PHX45NQ11T - N-channel TrenchMOS standard level FET

General Description

N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.

Key Features

  • s Low on-state resistance s Isolated package. 1.3.

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www.DataSheet4U.com PHX45NQ11T N-channel TrenchMOS™ standard level FET Rev. 01 — 17 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology. 1.2 Features s Low on-state resistance s Isolated package. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 62.5 W s ID ≤ 30.4 A s RDSon ≤ 25 mΩ. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT186A (TO-220F) simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; isolated g mbb076 Simplified outline mb Symbol d s 1 2 3 MBK110 SOT186A (TO-220F) Philips Semiconductors PHX45NQ11T www.DataSheet4U.