PMDPB65UP - Dual P-Channel MOSFET

Product Overview

NXP Semiconductors

Datasheet Details

Part number	PMDPB65UP
Manufacturer	NXP Semiconductors
File Size	202.95 KB
Description	Dual P-Channel MOSFET
Datasheet	PMDPB65UP Datasheet
Additional preview pages of the PMDPB65UP datasheet.

Product details

Description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology.
1.8 V RDSon rated for low voltage gate drive.
1 kV ElectroStatic Discharge (ESD) protection.
Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm.
Exposed drain pad for excellent thermal conduction 1.3.

📁 Similar Datasheet

PMDPB1S6P01 - The 5-Phase Stepping Driver (Sanyo Denki)
PMDPB30XN - dual N-channel MOSFET (nexperia)
PMDPB55XP - Dual P-channel MOSFET (nexperia)
PMDPB56XNEA - dual N-channel MOSFET (nexperia)
PMDPB58UPE - dual P-channel MOSFET (nexperia)
PMDPB70XP - dual P-channel MOSFET (nexperia)
PMDPB70XPE - dual P-channel MOSFET (nexperia)
PMDPB80XP - dual P-channel MOSFET (nexperia)

Other Datasheets by NXP Semiconductors

PMDPB28UN - dual N-channel Trench MOSFET
PMDPB30XN - dual N-channel Trench MOSFET
PMDPB38UNE - 20V dual N-channel Trench MOSFET
PMDPB42UN - dual N-channel Trench MOSFET
PMDPB55XP - dual P-channel Trench MOSFET
PMDPB56XN - MOSFET

Published: Aug 24, 2014 |