PMDPB65UP Description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMDPB65UP Key Features
- Trench MOSFET technology
- 1.8 V RDSon rated for low voltage gate drive
- 1 kV ElectroStatic Discharge (ESD) protection
- Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
- Exposed drain pad for excellent thermal conduction
PMDPB65UP Applications
- Charging switch for portable devices
- DC-to-DC converters