PMEG3002AELD Datasheet | NXP Semiconductors

scription Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits - - - - Forward current: IF ≤ 0.2 A Reverse voltage: VR ≤ 30 V Low forward voltage: VF ≤ 480 m V Ultra small and leadless SMD plastic package - AEC-Q101 qualified - Solderable side pads - Package height typ. 0.37 mm 1.3 Applications - - - - - - Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications Ultra high-speed switching 1.4 Quick reference data Table 1. ..net Quick reference data Conditions square wave; δ = 0.5; f = 20 k Hz Tamb ≤ 125 °C Tsp ≤ 140 °C VR = 10 V IF = 200 m A [2] [1] Symbol Parameter IF(AV) average forward current Min - Typ 3.5 430 Max 0.2 0.2 10 30 480 Unit A A μA V m V IR VR VF [1] [2] reverse current reverse voltage forward voltage Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. NXP Semiconductors 30 V, 0.2 A low VF MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode...